All MOSFET. RRS130N03 Datasheet

 

RRS130N03 Datasheet and Replacement


   Type Designator: RRS130N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0122(typ) Ohm
   Package: SO8
 

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RRS130N03 Datasheet (PDF)

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RRS130N03

RRS130N03www.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

Datasheet: P60NF06 , P80NF55-08 , PHB32N06 , PHD78NQ03L , PHK12NQ03L , RFD15P05SM , RFP6P08 , RJK0822SPN , 20N60 , RSS100N03T , SDM4953A , SI1539CDL-T1 , SI1553CDL-T1-GE3 , SI1555DL-T1 , SI1967DH-T1-GE3 , SI2300BDS-T1-GE3 , SI2300DS-T1-GE3 .

History: R6009ENJ | CRJD390N65GC | TPC8029

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