RRS130N03 PDF and Equivalents Search

 

RRS130N03 Specs and Replacement

Type Designator: RRS130N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0122 typ Ohm

Package: SO8

RRS130N03 substitution

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RRS130N03 datasheet

 ..1. Size:306K  cn vbsemi
 rrs130n03.pdf pdf_icon

RRS130N03

RRS130N03 www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch ... See More ⇒

Detailed specifications: P60NF06, P80NF55-08, PHB32N06, PHD78NQ03L, PHK12NQ03L, RFD15P05SM, RFP6P08, RJK0822SPN, 20N60, RSS100N03T, SDM4953A, SI1539CDL-T1, SI1553CDL-T1-GE3, SI1555DL-T1, SI1967DH-T1-GE3, SI2300BDS-T1-GE3, SI2300DS-T1-GE3

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