SI2301CDS-T1 MOSFET. Datasheet pdf. Equivalent

   Type Designator: SI2301CDS-T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
   Package: SOT23

SI2301CDS-T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SI2301CDS-T1 Datasheet (PDF)

..1. Size:892K cn vbsemi
si2301cds-t1.pdf

SI2301CDS-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATION

5.1. Size:193K vishay
si2301cds.pdf

Si2301CDSVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.112 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET- 20 3.3 nC Compliant to RoHS Directive 2002/95/EC0.142 at VGS = - 2.5 V - 2.7APPLICATIONS Load SwitchTO-236 (SOT-23) G

5.2. Size:9298K cn tech public
si2301cds.pdf