All MOSFET. SI2301DS-T1-GE3 Datasheet

 

SI2301DS-T1-GE3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI2301DS-T1-GE3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
   Package: SOT23

 SI2301DS-T1-GE3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI2301DS-T1-GE3 Datasheet (PDF)

 0.1. Size:866K  cn vbsemi
 si2301ds-t1-ge3.pdf

SI2301DS-T1-GE3 SI2301DS-T1-GE3

SI2301DS-T1-GE3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICAT

 5.1. Size:1968K  kexin
 si2301ds-3.pdf

SI2301DS-T1-GE3 SI2301DS-T1-GE3

SMD Type MOSFETP-Channel Enhancement MOSFET SI2301DS (KI2301DS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V RDS(ON) 100m (VGS =-4.5V) RDS(ON) 150m (VGS =-2.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 se

 6.1. Size:61K  vishay
 si2301ds.pdf

SI2301DS-T1-GE3 SI2301DS-T1-GE3

Si2301DSVishay SiliconixP-Channel 1.25-W, 2.5-V MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.130 @ VGS = - 4.5 V -2.3-20200.190 @ VGS = - 2.5 V -1.9TO-236(SOT-23)G 13 DOrdering Information: Si2301DS-T1S 2Top ViewSi2301DS (A1)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS -20

 6.2. Size:1698K  kexin
 si2301ds.pdf

SI2301DS-T1-GE3 SI2301DS-T1-GE3

SMD Type MOSFETP-Channel Enhancement MOSFET SI2301DS (KI2301DS) FeaturesSOT-23Unit: mm+0.12.9 -0.1 VDS (V) =-20V+0.10.4-0.1 RDS(ON) 130m (VGS =-4.5V)3 RDS(ON) 190m (VGS =-2.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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