SI2302CDS-T1-GE3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SI2302CDS-T1-GE3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
Rise Time (tr): 17 nS
Drain-Source Capacitance (Cd): 105 pF
Maximum Drain-Source On-State Resistance (Rds): 0.028(typ) Ohm
Package: SOT23
SI2302CDS-T1-GE3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI2302CDS-T1-GE3 Datasheet (PDF)
si2302cds-t1-ge3.pdf
SI2302CDS-T1-GE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/
si2302cds.pdf
Si2302CDSVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) Material categorization:0.057 at VGS = 4.5 V 2.9 For definitions of compliance please see 20 3.50.075 at VGS = 2.5 V www.vishay.com/doc?999122.6APPLICATIONS Load Switching for Portable Devices DC/DC ConverterTO
si2302cd.pdf
Si2302CDSVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.057 at VGS = 4.5 V 2.920 3.5RoHS0.075 at VGS = 2.5 V APPLICATIONS2.6COMPLIANT Load Switching for Portable Devices DC/DC ConverterTO-236(SOT-23)G 13 DS 2Top ViewSi2302
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