SI2333DS-T1-GE3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SI2333DS-T1-GE3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
Package: SOT23
SI2333DS-T1-GE3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI2333DS-T1-GE3 Datasheet (PDF)
si2333ds-t1-ge3.pdf
SI2333DS-T1-GE3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICAT
si2333ds-3.pdf
SMD Type MOSFETP-Channel MOSFETSI2333DS (KI2333DS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-12V ID =-5.3 A (VGS =-4.5V)1 2 RDS(ON) 32m (VGS =-4.5V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 42m (VGS =-2.5V) RDS(ON) 59m (VGS =-1.8V)1. Gate2. Source3. DrainG 13 DS 2 Absolute
si2333ds.pdf
Si2333DSVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.032 at VGS = - 4.5 V - 5.3 TrenchFET Power MOSFET 0.042 at VGS = - 2.5 V - 12 - 4.6APPLICATIONS0.059 at VGS = - 1.8 V - 3.9 Load Switch PA SwitchTO-236(SOT-23)G 13 DS 2Top ViewS
si2333ds.pdf
SMD Type MOSFETP-Channel MOSFETSI2333DS (KI2333DS)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) =-12V ID =-5.3 A (VGS =-4.5V)1 2 RDS(ON) 32m (VGS =-4.5V) +0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.1 RDS(ON) 42m (VGS =-2.5V) RDS(ON) 59m (VGS =-1.8V)1. Gate2. Source3. DrainG 13 DS 2 Absolute Max
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