SI2333DS-T1-GE3 PDF and Equivalents Search

 

SI2333DS-T1-GE3 Specs and Replacement

Type Designator: SI2333DS-T1-GE3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 typ Ohm

Package: SOT23

SI2333DS-T1-GE3 substitution

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SI2333DS-T1-GE3 datasheet

 0.1. Size:866K  cn vbsemi
 si2333ds-t1-ge3.pdf pdf_icon

SI2333DS-T1-GE3

SI2333DS-T1-GE3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICAT... See More ⇒

 5.1. Size:1240K  kexin
 si2333ds-3.pdf pdf_icon

SI2333DS-T1-GE3

SMD Type MOSFET P-Channel MOSFET SI2333DS (KI2333DS) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-12V ID =-5.3 A (VGS =-4.5V) 1 2 RDS(ON) 32m (VGS =-4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 RDS(ON) 42m (VGS =-2.5V) RDS(ON) 59m (VGS =-1.8V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute... See More ⇒

 6.1. Size:186K  vishay
 si2333ds.pdf pdf_icon

SI2333DS-T1-GE3

Si2333DS Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.032 at VGS = - 4.5 V - 5.3 TrenchFET Power MOSFET 0.042 at VGS = - 2.5 V - 12 - 4.6 APPLICATIONS 0.059 at VGS = - 1.8 V - 3.9 Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 Top View S... See More ⇒

 6.2. Size:1223K  kexin
 si2333ds.pdf pdf_icon

SI2333DS-T1-GE3

SMD Type MOSFET P-Channel MOSFET SI2333DS (KI2333DS) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-12V ID =-5.3 A (VGS =-4.5V) 1 2 RDS(ON) 32m (VGS =-4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 RDS(ON) 42m (VGS =-2.5V) RDS(ON) 59m (VGS =-1.8V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Max... See More ⇒

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Detailed specifications: SI2305CDS-T1-GE3, SI2305DS-T1-GE3, SI2309CDS-T1-GE3, SI2312BDS-T1, SI2312CDS-T1-GE3, SI2324DS-T1-GE3, SI2333CDS-T1-GE3, SI2333DDS-T1, IRF9540, SI2335DS-T1, SI2342DS-T1, SI2351DS-T1, SI2399DS-T1, SI3911DV-T1, SI4401BDY-T1, SI4401DDY-T1-GE3, SI4405DY-T1

Keywords - SI2333DS-T1-GE3 MOSFET specs

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