All MOSFET. FDB045AN08A0 Datasheet

 

FDB045AN08A0 Datasheet and Replacement


   Type Designator: FDB045AN08A0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 92 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO263 D2PAK
 

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FDB045AN08A0 Datasheet (PDF)

 ..1. Size:543K  fairchild semi
 fdb045an08a0.pdf pdf_icon

FDB045AN08A0

May 2006tmFDB045AN08A0N-Channel PowerTrench MOSFET 75V, 80A, 4.5mFeatures Applications rDS(ON) = 3.9m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Systems UIS Capability (Si

 0.1. Size:693K  onsemi
 fdb045an08a0-f085.pdf pdf_icon

FDB045AN08A0

FDB045AN08A0-F085N-Channel PowerTrench MOSFET Applications75V, 80A, 4.5m 42V Automotive Load Control Starter / Alternator SystemsFeatures rDS(ON) = 3.9m (Typ.), VGS = 10V, ID = 80A Electronic Power Steering Systems Qg(tot) = 92nC (Typ.), VGS = 10V Electronic Valve Train Systems Low Miller Charge DC-DC converters and Off-line UPS Low QRR B

 4.1. Size:252K  fairchild semi
 fdb045an08 f085.pdf pdf_icon

FDB045AN08A0

June 2010_FDB045AN08A0 F085N-Channel PowerTrench MOSFET 75V, 80A, 4.5m Features Applications rDS(ON) = 3.9m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Systems UIS Capability

 9.1. Size:551K  fairchild semi
 fdb047n10.pdf pdf_icon

FDB045AN08A0

August 2008FDB047N10tmN-Channel PowerTrench MOSFET 100V, 164A, 4.7mDescription General Description RDS(on) = 3.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon-ductors advance PowerTrench process that has been especially Fast switching speedtailored to minimize the on-state resistance and yet maintain superior switch

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History: SI2303BDS | IRFIZ48N | 2SJ462

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