Справочник MOSFET. FDB045AN08A0

 

FDB045AN08A0 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDB045AN08A0
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 310 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: TO263 D2PAK

 Аналог (замена) для FDB045AN08A0

 

 

FDB045AN08A0 Datasheet (PDF)

 ..1. Size:543K  fairchild semi
 fdb045an08a0.pdf

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May 2006tmFDB045AN08A0N-Channel PowerTrench MOSFET 75V, 80A, 4.5mFeatures Applications rDS(ON) = 3.9m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Systems UIS Capability (Si

 0.1. Size:693K  onsemi
 fdb045an08a0-f085.pdf

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FDB045AN08A0-F085N-Channel PowerTrench MOSFET Applications75V, 80A, 4.5m 42V Automotive Load Control Starter / Alternator SystemsFeatures rDS(ON) = 3.9m (Typ.), VGS = 10V, ID = 80A Electronic Power Steering Systems Qg(tot) = 92nC (Typ.), VGS = 10V Electronic Valve Train Systems Low Miller Charge DC-DC converters and Off-line UPS Low QRR B

 4.1. Size:252K  fairchild semi
 fdb045an08 f085.pdf

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June 2010_FDB045AN08A0 F085N-Channel PowerTrench MOSFET 75V, 80A, 4.5m Features Applications rDS(ON) = 3.9m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Systems UIS Capability

 9.1. Size:551K  fairchild semi
 fdb047n10.pdf

FDB045AN08A0 FDB045AN08A0

August 2008FDB047N10tmN-Channel PowerTrench MOSFET 100V, 164A, 4.7mDescription General Description RDS(on) = 3.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon-ductors advance PowerTrench process that has been especially Fast switching speedtailored to minimize the on-state resistance and yet maintain superior switch

 9.2. Size:1364K  onsemi
 fdb047n10.pdf

FDB045AN08A0 FDB045AN08A0

Другие MOSFET... FDB024N04AL7 , FDB024N06 , FDB029N06 , FDB031N08 , FDB035AN06A0 , FDB035N10A , STU407D , FDB039N06 , 10N60 , FDB045AN08A0F085 , FDB047N10 , STU405DH , FDB050AN06A0 , FDB060AN08A0 , FDB070AN06A0 , FDB075N15A , FDB082N15A .

 

 
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