SI4410DY-T1 MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4410DY-T1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 165 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012(typ) Ohm
Package: SO8
SI4410DY-T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4410DY-T1 Datasheet (PDF)
si4410dy-t1.pdf
SI4410DY-T1www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
si4410dy.pdf
PD - 91853CSi4410DYHEXFET Power MOSFET N-Channel MOSFETAA Low On-Resistance 1 8S DVDSS = 30V Low Gate Charge2 7S D Surface Mount3 6S D Logic Level Drive4 5G DRDS(on) = 0.0135Top ViewDescriptionThis N-channel HEXFET Power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-resistance and low gat
si4410dypbf si4410dytrpbf.pdf
PD - 95168Si4410DYPbFHEXFET Power MOSFETl N-Channel MOSFETl Low On-ResistanceAl Low Gate Charge A1 8S DVDSS = 30Vl Surface Mount2 7S Dl Logic Level Drive3 6l Lead-Free S D4 5G D RDS(on) = 0.0135DescriptionTop ViewThis N-channel HEXFET Power MOSFET isproduced using International Rectifier's advancedHEXFET power MOSFET technology. The low on-re
si4410dy.pdf
SI4410DYN-channel TrenchMOS logic level FETRev. 03 4 December 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a
si4410dypbf.pdf
PD - 95168Si4410DYPbFHEXFET Power MOSFETl N-Channel MOSFETl Low On-ResistanceAl Low Gate Charge A1 8S DVDSS = 30Vl Surface Mount2 7S Dl Logic Level Drive3 6l Lead-Free S D4 5G D RDS(on) = 0.0135DescriptionTop ViewThis N-channel HEXFET Power MOSFET isproduced using International Rectifier's advancedHEXFET power MOSFET technology. The low on-re
si4410dy.pdf
SMD Type MOSFETN-Channel MOSFETSI4410DY (KI4410DY)SOP-8 Features VDS (V) = 30V ID = 10 A (VGS = 10V) 1.50 0.15 RDS(ON) 13.5m (VGS = 10V) RDS(ON) 20m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V
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