SI4410DY-T1 - аналоги, параметры транзистора - Справочник транзисторов

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SI4410DY-T1 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

6.1. Size:93K international rectifier
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PD - 91853C Si4410DY HEXFET Power MOSFET N-Channel MOSFET A A Low On-Resistance 1 8 S D VDSS = 30V Low Gate Charge 2 7 S D Surface Mount 3 6 S D Logic Level Drive 4 5 G D RDS(on) = 0.0135 Top View Description This N-channel HEXFET Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gat

6.2. Size:119K vishay
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PD - 95168 Si4410DYPbF HEXFET Power MOSFET l N-Channel MOSFET l Low On-Resistance A l Low Gate Charge A 1 8 S D VDSS = 30V l Surface Mount 2 7 S D l Logic Level Drive 3 6 l Lead-Free S D 4 5 G D RDS(on) = 0.0135 Description Top View This N-channel HEXFET Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on- re

6.3. Size:353K vishay
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SI4410DY N-channel TrenchMOS logic level FET Rev. 03 4 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features a