Справочник MOSFET. SI4410DY-T1

 

SI4410DY-T1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI4410DY-T1
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 165 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012(typ) Ohm
   Тип корпуса: SO8

 Аналог (замена) для SI4410DY-T1

 

 

SI4410DY-T1 Datasheet (PDF)

 ..1. Size:865K  cn vbsemi
 si4410dy-t1.pdf

SI4410DY-T1 SI4410DY-T1

SI4410DY-T1www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

 6.1. Size:93K  international rectifier
 si4410dy.pdf

SI4410DY-T1 SI4410DY-T1

PD - 91853CSi4410DYHEXFET Power MOSFET N-Channel MOSFETAA Low On-Resistance 1 8S DVDSS = 30V Low Gate Charge2 7S D Surface Mount3 6S D Logic Level Drive4 5G DRDS(on) = 0.0135Top ViewDescriptionThis N-channel HEXFET Power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-resistance and low gat

 6.2. Size:119K  vishay
 si4410dypbf si4410dytrpbf.pdf

SI4410DY-T1 SI4410DY-T1

PD - 95168Si4410DYPbFHEXFET Power MOSFETl N-Channel MOSFETl Low On-ResistanceAl Low Gate Charge A1 8S DVDSS = 30Vl Surface Mount2 7S Dl Logic Level Drive3 6l Lead-Free S D4 5G D RDS(on) = 0.0135DescriptionTop ViewThis N-channel HEXFET Power MOSFET isproduced using International Rectifier's advancedHEXFET power MOSFET technology. The low on-re

 6.3. Size:353K  vishay
 si4410dy.pdf

SI4410DY-T1 SI4410DY-T1

SI4410DYN-channel TrenchMOS logic level FETRev. 03 4 December 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a

 6.4. Size:119K  infineon
 si4410dypbf.pdf

SI4410DY-T1 SI4410DY-T1

PD - 95168Si4410DYPbFHEXFET Power MOSFETl N-Channel MOSFETl Low On-ResistanceAl Low Gate Charge A1 8S DVDSS = 30Vl Surface Mount2 7S Dl Logic Level Drive3 6l Lead-Free S D4 5G D RDS(on) = 0.0135DescriptionTop ViewThis N-channel HEXFET Power MOSFET isproduced using International Rectifier's advancedHEXFET power MOSFET technology. The low on-re

 6.5. Size:1155K  kexin
 si4410dy.pdf

SI4410DY-T1 SI4410DY-T1

SMD Type MOSFETN-Channel MOSFETSI4410DY (KI4410DY)SOP-8 Features VDS (V) = 30V ID = 10 A (VGS = 10V) 1.50 0.15 RDS(ON) 13.5m (VGS = 10V) RDS(ON) 20m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V

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