SI4466DY-T1 PDF and Equivalents Search

 

SI4466DY-T1 Specs and Replacement

Type Designator: SI4466DY-T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 195 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004(typ) Ohm

Package: SO8

SI4466DY-T1 substitution

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SI4466DY-T1 datasheet

 ..1. Size:852K  cn vbsemi
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SI4466DY-T1

SI4466DY-T1 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch... See More ⇒

 6.1. Size:225K  vishay
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SI4466DY-T1

Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.009 at VGS = 4.5 V 13.5 TrenchFET Power MOSFETs 20 0.013 at VGS = 2.5 V 11 Compliant to RoHS Directive 2002/95/EC D SO-8 S D 1 8 S D 2 7 G 3 6 S D G D 4 5 Top View S Ordering Infor... See More ⇒

 9.1. Size:229K  vishay
si4464dy.pdf pdf_icon

SI4466DY-T1

Si4464DY Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.240 at VGS = 10 V 2.2 TrenchFET Power MOSFET 200 0.260 at VGS = 6.0 V 2.1 PWM Optimized for Low Qg and Low Rg Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D SO... See More ⇒

 9.2. Size:74K  vishay
si4467dy.pdf pdf_icon

SI4466DY-T1

Si4467DY Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = 4.5 V "12 12 0.014 @ VGS = 2.5 V "11 12 0.020 @ VGS = 1.8 V "9 S S S SO-8 SD 1 8 G SD 2 7 SD 3 6 GD 4 5 Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage V... See More ⇒

Detailed specifications: SI4401DDY-T1-GE3 , SI4405DY-T1 , SI4410DY-T1 , SI4416DY , SI4421DY-T1 , SI4431CDY-T1-E3 , SI4435BDY , SI4435DY-T1-E3 , 13N50 , SI4532ADY-T1 , SI4539DY-T1 , SI4840DY-T1-E3 , SI4890BDY-T1 , SI4920DY-T1 , SI4944DY , SI4947DY , SI4948BEY-T1-E3 .

Keywords - SI4466DY-T1 MOSFET specs

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