SI4466DY-T1www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

Si4466DYVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.009 at VGS = 4.5 V 13.5 TrenchFET Power MOSFETs 200.013 at VGS = 2.5 V 11 Compliant to RoHS Directive 2002/95/ECDSO-8 S D1 8 S D2 7 G3 6 S DG D4 5 Top View SOrdering Infor

Si4464DYVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.240 at VGS = 10 V 2.2 TrenchFET Power MOSFET2000.260 at VGS = 6.0 V 2.1 PWM Optimized for Low Qg and Low Rg Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDSO

Si4467DYVishay SiliconixP-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.011 @ VGS = 4.5 V "1212 0.014 @ VGS = 2.5 V "11120.020 @ VGS = 1.8 V "9S S SSO-8SD1 8GSD2 7SD3 6GD4 5Top ViewD D D DP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage V

New ProductSi4463CDYVishay SiliconixP-Channel 2.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.008 at VGS = - 10 V - 18.6 TrenchFET Power MOSFET- 20 0.010 at VGS = - 4.5 V - 16.6 54 nC 100 % Rg Tested0.014 at VGS = - 2.5 V - 14 100 % UIS Tested Compliant to RoHS

Si4463BDYVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.011 at VGS = - 10 V - 13.7 TrenchFET Power MOSFETs0.014 at VGS = - 4.5 V - 20 - 12.30.020 at VGS = - 2.5 V - 10.3SSO-8S 1 8 DGS D2 73 6SDG D4 5Top ViewDOrdering Information: Si4

Si4465ADYVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)b Qg (Typ.)Available0.009 at VGS = - 4.5 V - 13.7 TrenchFET Power MOSFET 1.8 V Rated0.011 at VGS = - 2.5 V - 12.4 55 nC- 8 100 % Rg Tested0.016 at VGS = - 1.8 V - 10SSO-8 SD1 8 GS D2 7 SD

Si4465DYVishay SiliconixP-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.009 @ VGS = 4.5 V 148 0.011 @ VGS = 2.5 V 120.016 @ VGS = 1.8 V 10SSO-8SD1 8GS D2 7SD3 6G D4 5Top ViewDOrdering Information: Si4465DY-T1P-Channel MOSFETSi4465DY-T1E3 (Lead (Pb)free)ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTH

Si4462DYVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.480 at VGS = 10 V 1.50 TrenchFET Power MOSFET2000.510 at VGS = 6.0 V 1.45 PWM Optimized for fast Switching Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDSO-

Si4463DYVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) rDS(on) (W) ID (A) D Lead (Pb)-Free Version is RoHSCompliant Available0.014 @ VGS = -4.5 V-13-20-200.020 @ VGS = -2.5 V -11SSO-8SD1 8GS D2 7SD3 6G D4 5DTop ViewP-Channel MOSFETOrdering Information: Si4463DY-T1Si4463DY-T1E3 (Lead (Pb)-Free)ABSOLUTE MAXIMUM

Si4463BDYVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.011 at VGS = - 10 V - 13.7 TrenchFET Power MOSFETs0.014 at VGS = - 4.5 V - 20 - 12.30.020 at VGS = - 2.5 V - 10.3SSO-8S 1 8 DGS D2 73 6SDG D4 5Top ViewDOrdering Information: Si4

SMD Type MOSFETP-Channel MOSFETSI4463BDY (KI4463BDY)SOP-8 Features VDS (V) =-20V ID =-13.7 A (VGS =-10V)1.50 0.15 RDS(ON) 11m (VGS =-10V) RDS(ON) 14m (VGS =-4.5V) RDS(ON) 20m (VGS =-2.5V) 5 Drain1 Source6 Drain2 Source7 Drain3 Source8 Drain4 GateSGD Absolute Maximum Ratings Ta = 25Parameter Symbol 10 Secs

Si4463CDYwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G

SI4463BDY-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typi

SI4465ADY-T1-E3www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2