SI4532ADY-T1 MOSFET Datasheet: NP-Ch, 30V, 6.8A. Full specification with pinout and replacement list

SI4532ADY-T1 Specs and Replacement

Type Designator: SI4532ADY-T1

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 typ Ohm

Package: SO8

SI4532ADY-T1 substitution

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SI4532ADY-T1 datasheet

..1. Size:956K cn vbsemi
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SI4532ADY-T1 www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at... See More ⇒

5.1. Size:247K vishay
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Si4532ADY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.053 at VGS = 10 V 4.9 TrenchFET Power MOSFETs N-Channel 30 0.075 at VGS = 4.5 V 4.1 0.080 at VGS = - 10 V - 3.9 P-Channel - 30 0.135 at VGS = - 4.5 V - 3.0 S2 D1 SO-8 S1 1 D1 8 G2 G1 2 D1 7 ... See More ⇒

8.1. Size:274K fairchild semi
si4532dy.pdf pdf_icon

September 1999 Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power N-Channel 3.9A, 30V.RDS(ON) = 0.065 @VGS = 10V field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very RDS(ON) = 0.095 @VGS = 4.5V. high density process... See More ⇒

8.2. Size:291K vishay
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Si4532CDY Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.047 at VGS = 10 V 6.0 TrenchFET Power MOSFET N-Channel 30 2.75 0.065 at VGS = 4.5 V 5.2 100 % Rg Tested 0.089 at VGS = - 10 V - 4.3 100 % UIS Tested P-Channel - 30 4.1 Compli... See More ⇒