All MOSFET. SI4539DY-T1 Datasheet

 

SI4539DY-T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4539DY-T1
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Maximum Power Dissipation (Pd): 2 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
   Maximum Drain Current |Id|: 6.8 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 6 nC
   Rise Time (tr): 10 nS
   Drain-Source Capacitance (Cd): 95 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.018(typ) Ohm
   Package: SO8

 SI4539DY-T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4539DY-T1 Datasheet (PDF)

 ..1. Size:956K  cn vbsemi
si4539dy-t1.pdf

SI4539DY-T1
SI4539DY-T1

SI4539DY-T1www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at

 6.1. Size:63K  vishay
si4539dy.pdf

SI4539DY-T1
SI4539DY-T1

Si4539DYDual N- and P-Channel 30-V (D-S) Rated MOSFETProduct SummaryVDS (V) rDS(on) (W) ID (A)0.037 @ VGS = 10 V "5.8N-Channel 30N Channel 300.055 @ VGS = 4.5 V "4.70.053 @ VGS = 10 V "4.9P Channel 30P-Channel 300.095 @ VGS = 4.5 V "3.6D1 D1 S2SO-8S1 1 8 D1G2G1 2 7 D1G1S2 3 6 D2G2 4 5 D2Top ViewS1 D2 D2N-Channel MOSFET P-Channel MOSFETAbsol

 8.1. Size:266K  vishay
si4539ady.pdf

SI4539DY-T1
SI4539DY-T1

Si4539ADYVishay SiliconixN- and P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.036 at VGS = 10 V 5.9 TrenchFET Power MOSFETsN-Channel 300.053 at VGS = 4.5 V 4.9 Compliant to RoHS Directive 2002/95/EC0.053 at VGS = - 10 V - 4.9P-Channel - 300.090 at VGS = - 4.5 V -

 9.1. Size:274K  fairchild semi
si4532dy.pdf

SI4539DY-T1
SI4539DY-T1

September 1999Si4532DY*Dual N- and P-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThese dual N- and P-Channel enhancement mode power N-Channel 3.9A, 30V.RDS(ON) = 0.065 @VGS = 10Vfield effect transistors are produced using Fairchild'spropretary, high cell density, DMOS technology. This very RDS(ON) = 0.095 @VGS = 4.5V.high density process

 9.2. Size:291K  vishay
si4532cdy.pdf

SI4539DY-T1
SI4539DY-T1

Si4532CDYVishay SiliconixN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.047 at VGS = 10 V 6.0 TrenchFET Power MOSFETN-Channel 30 2.750.065 at VGS = 4.5 V 5.2 100 % Rg Tested0.089 at VGS = - 10 V - 4.3 100 % UIS TestedP-Channel - 30 4.1 Compli

 9.3. Size:98K  vishay
si4532dy.pdf

SI4539DY-T1
SI4539DY-T1

Si4532DYVishay SiliconixN- and P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) RDS(ON) (W) ID (A)0.065 @ VGS = 10 V "3.9N-Channel 30N-Channel 300.095 @ VGS = 4.5 V "3.10.085 @ VGS = 10 V "3.5P-Channel 30P-Channel 300.19 @ VGS = 4.5 V "2.5D1 S2SO-8S1 1 D18G2G1 2 D17G1S2 3 D26G2 4 D25Top ViewS1 D2N-Channel MOSFET P-Channel MOSFET

 9.4. Size:247K  vishay
si4532ady.pdf

SI4539DY-T1
SI4539DY-T1

Si4532ADYVishay SiliconixN- and P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.053 at VGS = 10 V 4.9 TrenchFET Power MOSFETsN-Channel 300.075 at VGS = 4.5 V 4.10.080 at VGS = - 10 V - 3.9P-Channel - 300.135 at VGS = - 4.5 V - 3.0S2D1SO-8S1 1 D18G2G1 2 D17

 9.5. Size:290K  vishay
si4532cd.pdf

SI4539DY-T1
SI4539DY-T1

Si4532CDYVishay SiliconixN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.047 at VGS = 10 V 6.0 TrenchFET Power MOSFETN-Channel 30 2.750.065 at VGS = 4.5 V 5.2 100 % Rg Tested0.089 at VGS = - 10 V - 4.3 100 % UIS TestedP-Channel - 30 4.1 Compli

 9.6. Size:956K  cn vbsemi
si4532ady-t1.pdf

SI4539DY-T1
SI4539DY-T1

SI4532ADY-T1www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at

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