SI4539DY-T1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI4539DY-T1
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 6 nC
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 95 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018(typ) Ohm
Тип корпуса: SO8
Аналог (замена) для SI4539DY-T1
SI4539DY-T1 Datasheet (PDF)
si4539dy-t1.pdf
SI4539DY-T1www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at
si4539dy.pdf
Si4539DYDual N- and P-Channel 30-V (D-S) Rated MOSFETProduct SummaryVDS (V) rDS(on) (W) ID (A)0.037 @ VGS = 10 V "5.8N-Channel 30N Channel 300.055 @ VGS = 4.5 V "4.70.053 @ VGS = 10 V "4.9P Channel 30P-Channel 300.095 @ VGS = 4.5 V "3.6D1 D1 S2SO-8S1 1 8 D1G2G1 2 7 D1G1S2 3 6 D2G2 4 5 D2Top ViewS1 D2 D2N-Channel MOSFET P-Channel MOSFETAbsol
si4539ady.pdf
Si4539ADYVishay SiliconixN- and P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.036 at VGS = 10 V 5.9 TrenchFET Power MOSFETsN-Channel 300.053 at VGS = 4.5 V 4.9 Compliant to RoHS Directive 2002/95/EC0.053 at VGS = - 10 V - 4.9P-Channel - 300.090 at VGS = - 4.5 V -
si4532dy.pdf
September 1999Si4532DY*Dual N- and P-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThese dual N- and P-Channel enhancement mode power N-Channel 3.9A, 30V.RDS(ON) = 0.065 @VGS = 10Vfield effect transistors are produced using Fairchild'spropretary, high cell density, DMOS technology. This very RDS(ON) = 0.095 @VGS = 4.5V.high density process
si4532cdy.pdf
Si4532CDYVishay SiliconixN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.047 at VGS = 10 V 6.0 TrenchFET Power MOSFETN-Channel 30 2.750.065 at VGS = 4.5 V 5.2 100 % Rg Tested0.089 at VGS = - 10 V - 4.3 100 % UIS TestedP-Channel - 30 4.1 Compli
si4532dy.pdf
Si4532DYVishay SiliconixN- and P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) RDS(ON) (W) ID (A)0.065 @ VGS = 10 V "3.9N-Channel 30N-Channel 300.095 @ VGS = 4.5 V "3.10.085 @ VGS = 10 V "3.5P-Channel 30P-Channel 300.19 @ VGS = 4.5 V "2.5D1 S2SO-8S1 1 D18G2G1 2 D17G1S2 3 D26G2 4 D25Top ViewS1 D2N-Channel MOSFET P-Channel MOSFET
si4532ady.pdf
Si4532ADYVishay SiliconixN- and P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.053 at VGS = 10 V 4.9 TrenchFET Power MOSFETsN-Channel 300.075 at VGS = 4.5 V 4.10.080 at VGS = - 10 V - 3.9P-Channel - 300.135 at VGS = - 4.5 V - 3.0S2D1SO-8S1 1 D18G2G1 2 D17
si4532cd.pdf
Si4532CDYVishay SiliconixN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.047 at VGS = 10 V 6.0 TrenchFET Power MOSFETN-Channel 30 2.750.065 at VGS = 4.5 V 5.2 100 % Rg Tested0.089 at VGS = - 10 V - 4.3 100 % UIS TestedP-Channel - 30 4.1 Compli
si4532ady-t1.pdf
SI4532ADY-T1www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
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