SI4840DY-T1-E3 MOSFET Datasheet: N-Ch, 40V, 12.4A. Full specification with pinout and replacement list

SI4840DY-T1-E3 Specs and Replacement

Type Designator: SI4840DY-T1-E3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 typ Ohm

Package: SO8

SI4840DY-T1-E3 substitution

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SI4840DY-T1-E3 datasheet

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SI4840DY-T1-E3 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchron... See More ⇒

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Si4840DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.009 at VGS = 10 V 14 TrenchFET Power MOSFET 40 0.012 at VGS = 4.5 V 12 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D S D 1 8 2 7 S D S 3 6 D G 4 5 G D Top View S Order... See More ⇒

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Si4840BDY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.009 at VGS = 10 V TrenchFET Power MOSFET 19 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronou... See More ⇒

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