All MOSFET. SI4840DY-T1-E3 Datasheet

 

SI4840DY-T1-E3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4840DY-T1-E3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 12.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01(typ) Ohm
   Package: SO8

 SI4840DY-T1-E3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4840DY-T1-E3 Datasheet (PDF)

 ..1. Size:859K  cn vbsemi
si4840dy-t1-e3.pdf

SI4840DY-T1-E3 SI4840DY-T1-E3

SI4840DY-T1-E3www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchron

 6.1. Size:244K  vishay
si4840dy.pdf

SI4840DY-T1-E3 SI4840DY-T1-E3

Si4840DYVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.009 at VGS = 10 V 14 TrenchFET Power MOSFET400.012 at VGS = 4.5 V 12 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8DS D1 82 7S DS 3 6 DG4 5G DTop ViewSOrder

 8.1. Size:238K  vishay
si4840bdy.pdf

SI4840DY-T1-E3 SI4840DY-T1-E3

Si4840BDYVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.009 at VGS = 10 V TrenchFET Power MOSFET1940 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronou

 8.2. Size:235K  vishay
si4840bd.pdf

SI4840DY-T1-E3 SI4840DY-T1-E3

Si4840BDYVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.009 at VGS = 10 V TrenchFET Power MOSFET1940 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronou

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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