All MOSFET. SI4840DY-T1-E3 Datasheet

 

SI4840DY-T1-E3 Datasheet and Replacement


   Type Designator: SI4840DY-T1-E3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01(typ) Ohm
   Package: SO8
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SI4840DY-T1-E3 Datasheet (PDF)

 ..1. Size:859K  cn vbsemi
 si4840dy-t1-e3.pdf pdf_icon

SI4840DY-T1-E3

SI4840DY-T1-E3www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchron

 6.1. Size:244K  vishay
 si4840dy.pdf pdf_icon

SI4840DY-T1-E3

Si4840DYVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.009 at VGS = 10 V 14 TrenchFET Power MOSFET400.012 at VGS = 4.5 V 12 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8DS D1 82 7S DS 3 6 DG4 5G DTop ViewSOrder

 8.1. Size:238K  vishay
 si4840bdy.pdf pdf_icon

SI4840DY-T1-E3

Si4840BDYVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.009 at VGS = 10 V TrenchFET Power MOSFET1940 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronou

 8.2. Size:235K  vishay
 si4840bd.pdf pdf_icon

SI4840DY-T1-E3

Si4840BDYVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.009 at VGS = 10 V TrenchFET Power MOSFET1940 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronou

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History: BRCS020N06SRA | KIA730H-252 | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

Keywords - SI4840DY-T1-E3 MOSFET datasheet

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