SI4948BEY-T1-E3 MOSFET Datasheet: P-Ch, 60V, 5.3A. Full specification with pinout and replacement list

SI4948BEY-T1-E3 Specs and Replacement

Type Designator: SI4948BEY-T1-E3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.054 typ Ohm

Package: SO8

SI4948BEY-T1-E3 substitution

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SI4948BEY-T1-E3 datasheet

0.1. Size:870K cn vbsemi
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SI4948BEY-T1-E3 www.VBsemi.tw Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.059 at VGS = - 10 V - 5.3 100 % UIS Tested RoHS - 60 17 nC COMPLIANT 0.069 at VGS = - 4.5 V - 5.0 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 ... See More ⇒

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Si4948BEY Vishay Siliconix Dual P-Channel 60-V (D-S) 175 MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.120 at VGS = - 10 V - 3.1 - 60 TrenchFET Power MOSFET 0.150 at VGS = - 4.5 V - 2.8 Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5... See More ⇒

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