SP8M3-TB Datasheet and Replacement
Type Designator: SP8M3-TB
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018(typ) Ohm
Package: SO8
SP8M3-TB substitution
SP8M3-TB Datasheet (PDF)
sp8m3-tb.pdf

SP8M3-TBwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS
sp8m3.pdf

SP8M3 Transistors Switching SP8M3 External dimensions (Unit : mm) Features 1) Low on-resistance. SOP82) Built-in G-S Protection Diode. 5.00.23) Small and Surface Mount Package (SOP8). Application Power switching, DC / DC converter. 0.20.10.40.11.270.1Each lead has same dimensions Equivalent circuit Absolute maximum ratings (Ta=25C) Limits (8)
Datasheet: SIR802DP-T1-GE3 , SM2300NSAC , SM3113NSUC , SM4028NSUC-TRG , SM4307PSKPC , SM4927BSKC , SM4953KC , SP8K1TB , IRF2807 , SPD09N05 , SPN2054T252RG , SPN2302S23R , SPN3414S23RGB , SPN4412WS8RG , SPN4436S8R , SPN6561S26RGB , SPP3414S23RG .
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