All MOSFET. SPD09N05 Datasheet

 

SPD09N05 Datasheet and Replacement


   Type Designator: SPD09N05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.073(typ) Ohm
   Package: TO252
 

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SPD09N05 Datasheet (PDF)

 ..1. Size:891K  cn vbsemi
 spd09n05.pdf pdf_icon

SPD09N05

SPD09N05www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters

 9.1. Size:576K  infineon
 spd09p06pl.pdf pdf_icon

SPD09N05

SPD09P06PL GSIPMOS=Power-Transistor===Product SummaryFeatureVDS-60 V P-Channel P-channelRDS(on) 0.25 Enhancement mode Enhancement modeID -9.7 A Logic Level Logic Level prueb 175C operating temperaturePG-TO252-3 175C operating temperature Avalanche rated Avalanche rated dv/dt rated dv/dt rated Pb-free lead

Datasheet: SM2300NSAC , SM3113NSUC , SM4028NSUC-TRG , SM4307PSKPC , SM4927BSKC , SM4953KC , SP8K1TB , SP8M3-TB , AON6380 , SPN2054T252RG , SPN2302S23R , SPN3414S23RGB , SPN4412WS8RG , SPN4436S8R , SPN6561S26RGB , SPP3414S23RG , SPP6506S26R .

History: 3060K

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