SPN4412WS8RG MOSFET Datasheet: N-Ch, 20V, 10A. Full specification with pinout and replacement list

SPN4412WS8RG Specs and Replacement

Type Designator: SPN4412WS8RG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 typ Ohm

Package: SO8

SPN4412WS8RG substitution

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SPN4412WS8RG datasheet

..1. Size:1433K cn vbsemi
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SPN4412WS8RG www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch... See More ⇒

9.1. Size:1422K cn vbsemi
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SPN4436S8R www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.025 at VGS = 10 V 7.6 60 10.5 nC Optimized for Low Side Synchronous 0.030 at VGS = 4.5 V 6.5 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCFL... See More ⇒

Detailed specifications: SM4927BSKC, SM4953KC, SP8K1TB, SP8M3-TB, SPD09N05, SPN2054T252RG, SPN2302S23R, SPN3414S23RGB, 75N75, SPN4436S8R, SPN6561S26RGB, SPP3414S23RG, SPP6506S26R, SPP6507S26RGB, SPP80N03S2L, SQ9407EY-T1, SSC8022GS6