SPN4412WS8RG Datasheet and Replacement
Type Designator: SPN4412WS8RG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012(typ) Ohm
Package: SO8
SPN4412WS8RG substitution
SPN4412WS8RG Datasheet (PDF)
spn4412ws8rg.pdf

SPN4412WS8RGwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
spn4436s8r.pdf

SPN4436S8Rwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL
Datasheet: SM4927BSKC , SM4953KC , SP8K1TB , SP8M3-TB , SPD09N05 , SPN2054T252RG , SPN2302S23R , SPN3414S23RGB , K2611 , SPN4436S8R , SPN6561S26RGB , SPP3414S23RG , SPP6506S26R , SPP6507S26RGB , SPP80N03S2L , SQ9407EY-T1 , SSC8022GS6 .
History: 2P829J9 | AOLF66417 | SDF5N100JAA
Keywords - SPN4412WS8RG MOSFET datasheet
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History: 2P829J9 | AOLF66417 | SDF5N100JAA



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