All MOSFET. SPN4436S8R Datasheet

 

SPN4436S8R Datasheet and Replacement


   Type Designator: SPN4436S8R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.030(typ) Ohm
   Package: SO8
 

 SPN4436S8R substitution

   - MOSFET ⓘ Cross-Reference Search

 

SPN4436S8R Datasheet (PDF)

 ..1. Size:1422K  cn vbsemi
 spn4436s8r.pdf pdf_icon

SPN4436S8R

SPN4436S8Rwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL

 9.1. Size:1433K  cn vbsemi
 spn4412ws8rg.pdf pdf_icon

SPN4436S8R

SPN4412WS8RGwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

Datasheet: SM4953KC , SP8K1TB , SP8M3-TB , SPD09N05 , SPN2054T252RG , SPN2302S23R , SPN3414S23RGB , SPN4412WS8RG , P60NF06 , SPN6561S26RGB , SPP3414S23RG , SPP6506S26R , SPP6507S26RGB , SPP80N03S2L , SQ9407EY-T1 , SSC8022GS6 , SSM2307G .

History: 4N70KG-TF1-T | SIF7N80C | SM9435PSK | BSC017N04NSG | SM4031NHKP | NTLJF4156NTAG | BSC0909NS

Keywords - SPN4436S8R MOSFET datasheet

 SPN4436S8R cross reference
 SPN4436S8R equivalent finder
 SPN4436S8R lookup
 SPN4436S8R substitution
 SPN4436S8R replacement

 

 
Back to Top

 


 
.