SPP6507S26RGB PDF and Equivalents Search

 

SPP6507S26RGB Specs and Replacement

Type Designator: SPP6507S26RGB

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 typ Ohm

Package: TSOP6

SPP6507S26RGB substitution

- MOSFET ⓘ Cross-Reference Search

 

SPP6507S26RGB datasheet

 ..1. Size:956K  cn vbsemi
 spp6507s26rgb.pdf pdf_icon

SPP6507S26RGB

SPP6507S26RGB www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET - 20 2.7 nC 0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portab... See More ⇒

 8.1. Size:1504K  cn vbsemi
 spp6506s26r.pdf pdf_icon

SPP6507S26RGB

SPP6506S26R www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET - 20 2.7 nC 0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable... See More ⇒

Detailed specifications: SPN2054T252RG , SPN2302S23R , SPN3414S23RGB , SPN4412WS8RG , SPN4436S8R , SPN6561S26RGB , SPP3414S23RG , SPP6506S26R , 7N60 , SPP80N03S2L , SQ9407EY-T1 , SSC8022GS6 , SSM2307G , ST2300S23RG , ST2302MSRG , STD10NF06 , STD30PF03 .

Keywords - SPP6507S26RGB MOSFET specs

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