STD10NF06 MOSFET Datasheet: N-Ch, 60V, 16.9A. Full specification with pinout and replacement list

STD10NF06 Specs and Replacement

Type Designator: STD10NF06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.073 typ Ohm

Package: TO252

STD10NF06 substitution

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STD10NF06 datasheet

..1. Size:1487K cn vbsemi
std10nf06.pdf pdf_icon

STD10NF06 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters ... See More ⇒

0.1. Size:302K st
std10nf06l.pdf pdf_icon

STD10NF06L N-CHANNEL 60V - 0.1 - 10A DPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD10NF06L 60V ... See More ⇒

7.1. Size:868K st
std10nf30.pdf pdf_icon

STD10NF30 Automotive-grade N-channel 300 V, 10 A, 0.28 typ., MESH OVERLAY Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on)max. ID STD10NF30 300 V 0.33 10 A TAB Designed for automotive applications and 3 AEC-Q101 qualified 1 Gate charge minimized DPAK Very low intrinsic capacitances Applications Switching appli... See More ⇒

7.2. Size:457K st
std10nf10-1 std10nf10t4 std10nf10.pdf pdf_icon

STD10NF10 STD10NF10-1 N-channel 100V - 0.115 - 13A - DPAK - IPAK Low gate charge STripFET II Power MOSFET General features VDSSS RDS(on) ID Type STD10NF10 100V ... See More ⇒