All MOSFET. STD10NF06 Datasheet

 

STD10NF06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD10NF06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 16.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.8 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.073(typ) Ohm
   Package: TO252

 STD10NF06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD10NF06 Datasheet (PDF)

 ..1. Size:1487K  cn vbsemi
 std10nf06.pdf

STD10NF06 STD10NF06

STD10NF06www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters

 0.1. Size:302K  st
 std10nf06l.pdf

STD10NF06 STD10NF06

STD10NF06LN-CHANNEL 60V - 0.1 - 10A DPAKSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD10NF06L 60V

 7.1. Size:868K  st
 std10nf30.pdf

STD10NF06 STD10NF06

STD10NF30Automotive-grade N-channel 300 V, 10 A, 0.28 typ., MESH OVERLAY Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. IDSTD10NF30 300 V 0.33 10 A TAB Designed for automotive applications and 3AEC-Q101 qualified1 Gate charge minimizedDPAK Very low intrinsic capacitancesApplications Switching appli

 7.2. Size:457K  st
 std10nf10-1 std10nf10t4 std10nf10.pdf

STD10NF06 STD10NF06

STD10NF10STD10NF10-1N-channel 100V - 0.115 - 13A - DPAK - IPAKLow gate charge STripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD10NF10 100V

 7.3. Size:849K  st
 std10nf10t4.pdf

STD10NF06 STD10NF06

STD10NF10T4 N-channel 100 V, 0.115 typ., 13 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD10NF10T4 100 V 0.130 13 A Exceptional dv/dt capability Application oriented characterization Applications Switching applications Figure 1: Internal schematic diagram Description D(2, TAB

 7.4. Size:905K  cn vbsemi
 std10nf10t4.pdf

STD10NF06 STD10NF06

STD10NF10T4www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATI

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: APT10M25BVFR

 

 
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