STD95NH02L MOSFET. Datasheet pdf. Equivalent
Type Designator: STD95NH02L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 171 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 710 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035(typ) Ohm
Package: TO251
STD95NH02L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD95NH02L Datasheet (PDF)
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std95nh02l.pdf
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std95nh02lt4.pdf
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