All MOSFET. SUD08P06-155 Datasheet

 

SUD08P06-155 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUD08P06-155
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.061(typ) Ohm
   Package: TO252

 SUD08P06-155 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUD08P06-155 Datasheet (PDF)

 ..1. Size:1423K  cn vbsemi
 sud08p06-155.pdf

SUD08P06-155 SUD08P06-155

SUD08P06-155www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter

 0.1. Size:169K  vishay
 sud08p06-155l-ge3.pdf

SUD08P06-155 SUD08P06-155

SUD08P06-155L-GE3www.vishay.comVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESDPAK (TO-252)DPAK ( TrenchFET power MOSFETs Material categorization:Drain connected to tabfor definitions of compliance pleasesee www.vishay.com/doc?99912SSDGGTop ViewPRODUCT SUMMARYVDS (V) -60RDS(on) max. () at VGS = -10 V 0.155DRDS(on) max. () at VGS =

 0.2. Size:79K  vishay
 sud08p06-155l.pdf

SUD08P06-155 SUD08P06-155

New ProductSUD08P06-155LVishay SiliconixP-Channel 60-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Rated Maximum Junction TemperatureRoHS0.155 at VGS = - 10 V - 8.4- 60 12.5 COMPLIANT0.280 at VGS = - 4.5 V - 7.4STO-252GDrain Connected to TabG D STop ViewDOrdering Information:

 0.3. Size:829K  cn vbsemi
 sud08p06-155l-e3.pdf

SUD08P06-155 SUD08P06-155

SUD08P06-155L-E3www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParame

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