SUD10P06-280L Datasheet and Replacement
Type Designator: SUD10P06-280L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.061(typ) Ohm
Package: TO252
SUD10P06-280L substitution
SUD10P06-280L Datasheet (PDF)
sud10p06-280l.pdf

SUD10P06-280LVishay SiliconixP-Channel 60-V (D-S), 175 C MOSFET, Logic LevelFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) ()ID (A) 175 C Rated Maximum Junction Temperature0.170 at VGS = - 10 V RoHS - 10- 60 COMPLIANT 0.280 at VGS = - 4.5 V - 8STO-252GDrain Connected to TabG D STop View DOrdering Information: SUD10P06-280L-E
sud10p06-280l.pdf

SUD10P06-280Lwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter
Datasheet: ST2302MSRG , STD10NF06 , STD30PF03 , STD60NF3L , STD95NH02L , STT8205S , SUD08P06-155 , SUD08P06-155L-E3 , AO4468 , SUD40N08 , SUP75N08-10 , SUU50N06-07L , TN0200K-T1 , TN0200TS , TP0101TS-T1 , TPCA8036 , UT100N03L .
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