All MOSFET. SUD10P06-280L Datasheet

 

SUD10P06-280L MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUD10P06-280L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.061(typ) Ohm
   Package: TO252

 SUD10P06-280L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUD10P06-280L Datasheet (PDF)

 ..1. Size:122K  vishay
 sud10p06-280l.pdf

SUD10P06-280L SUD10P06-280L

SUD10P06-280LVishay SiliconixP-Channel 60-V (D-S), 175 C MOSFET, Logic LevelFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) ()ID (A) 175 C Rated Maximum Junction Temperature0.170 at VGS = - 10 V RoHS - 10- 60 COMPLIANT 0.280 at VGS = - 4.5 V - 8STO-252GDrain Connected to TabG D STop View DOrdering Information: SUD10P06-280L-E

 ..2. Size:1455K  cn vbsemi
 sud10p06-280l.pdf

SUD10P06-280L SUD10P06-280L

SUD10P06-280Lwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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