TP0101TS-T1 MOSFET. Datasheet pdf. Equivalent
Type Designator: TP0101TS-T1
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
Package: SOT23
TP0101TS-T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TP0101TS-T1 Datasheet (PDF)
tp0101ts-t1.pdf
TP0101TS-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICAT
tp0101t ts.pdf
TP0101T/TSVishay SiliconixP-Channel 20-V (D-S) MOSFET, Low-ThresholdPRODUCT SUMMARYID (A)TP0101T TP0101TSVDS (V) rDS(on) (W)0.65 @ VGS = 4.5 V 0.6 1.0200.85 @ VGS = 2.5 V 0.5 0.9FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, MemoriesD Low On-Resistance: 0.45 W D
tp0101k.pdf
TP0101KVishay SiliconixP-Channel 20-V (D-S) MOSFET, Low-ThresholdPRODUCT SUMMARY FEATURES Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)eAvailable0.65 at VGS = - 4.5 V - 0.58 TrenchFET Power MOSFET- 200.85 at VGS = - 2.5 V - 0.5 ESD Protected: 3000 VAPPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memorie
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
