All MOSFET. UT2955G Datasheet

 

UT2955G Datasheet and Replacement


   Type Designator: UT2955G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.061(typ) Ohm
   Package: TO252
 

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UT2955G Datasheet (PDF)

 ..1. Size:1423K  cn vbsemi
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UT2955G

UT2955Gwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbo

 0.1. Size:234K  utc
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UT2955G

UNISONIC TECHNOLOGIES CO., LTD UT2955 Power MOSFET SINGLE P-CHANNEL POWER MOSFET DESCRIPTION The UT2955 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, converters and power supplies. FEATURES * RDS(ON)

 8.1. Size:186K  utc
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UT2955G

UNISONIC TECHNOLOGIES CO., LTD UT2955 Power MOSFET SINGLE P-CHANNEL POWER MOSFET DESCRIPTION The UT2955 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, converters and power supplies. FEATURES * RDS(ON)

Datasheet: TN0200K-T1 , TN0200TS , TP0101TS-T1 , TPCA8036 , UT100N03L , UT2301G-AE3-R , UT2302G-AE3 , UT2302L-AE3 , IRF640 , UT6898G-S08-R , UT8205AG-AG6 , UTT25P10L , UTT80N10 , VB1102M , VB1106K , VB1218X , VB1240B .

History: STP13NK60Z | PSMN7R5-30YLD | IRFPG32 | STB12NM60N-1 | NTMFS5C609NLT1G | DMZ6005E | KP8M6

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