UT6898G-S08-R MOSFET. Datasheet pdf. Equivalent
Type Designator: UT6898G-S08-R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 8.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 117 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009(typ) Ohm
Package: SO8
UT6898G-S08-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT6898G-S08-R Datasheet (PDF)
ut6898g-s08-r.pdf
UT6898G-S08-Rwww.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.009 at VGS = 4.5 V 10 TrenchFET Power MOSFET20 15 nC 100 % UIS Tested0.012 at VGS = 2.5 V 8.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
ut6898.pdf
UNISONIC TECHNOLOGIES CO., LTD UT6898 Power MOSFET N-CHANNEL ENHANCEMENT DESCRIPTION The UT6898 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
