All MOSFET. UT6898G-S08-R Datasheet

 

UT6898G-S08-R Datasheet and Replacement


   Type Designator: UT6898G-S08-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009(typ) Ohm
   Package: SO8
 

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UT6898G-S08-R Datasheet (PDF)

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UT6898G-S08-R

UT6898G-S08-Rwww.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.009 at VGS = 4.5 V 10 TrenchFET Power MOSFET20 15 nC 100 % UIS Tested0.012 at VGS = 2.5 V 8.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

 8.1. Size:194K  utc
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UT6898G-S08-R

UNISONIC TECHNOLOGIES CO., LTD UT6898 Power MOSFET N-CHANNEL ENHANCEMENT DESCRIPTION The UT6898 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

Datasheet: TN0200TS , TP0101TS-T1 , TPCA8036 , UT100N03L , UT2301G-AE3-R , UT2302G-AE3 , UT2302L-AE3 , UT2955G , IRFZ44 , UT8205AG-AG6 , UTT25P10L , UTT80N10 , VB1102M , VB1106K , VB1218X , VB1240B , VB1240X .

History: HM40N20 | SFB096N200C3 | RJK0223DNS | AM110N06-08P | 2SJ485 | NP90N04VLG | G16P03S

Keywords - UT6898G-S08-R MOSFET datasheet

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