UT6898G-S08-R MOSFET Datasheet: N-Ch, 20V, 8.1A. Full specification with pinout and replacement list

UT6898G-S08-R Specs and Replacement

Type Designator: UT6898G-S08-R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 117 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 typ Ohm

Package: SO8

UT6898G-S08-R substitution

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UT6898G-S08-R datasheet

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UT6898G-S08-R www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.009 at VGS = 4.5 V 10 TrenchFET Power MOSFET 20 15 nC 100 % UIS Tested 0.012 at VGS = 2.5 V 8.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box ... See More ⇒

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UNISONIC TECHNOLOGIES CO., LTD UT6898 Power MOSFET N-CHANNEL ENHANCEMENT DESCRIPTION The UT6898 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)... See More ⇒

Detailed specifications: TN0200TS, TP0101TS-T1, TPCA8036, UT100N03L, UT2301G-AE3-R, UT2302G-AE3, UT2302L-AE3, UT2955G, IRFZ44, UT8205AG-AG6, UTT25P10L, UTT80N10, VB1102M, VB1106K, VB1218X, VB1240B, VB1240X