All MOSFET. VB1102M Datasheet

 

VB1102M Datasheet and Replacement


   Type Designator: VB1102M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.240(typ) Ohm
   Package: SOT23
      - MOSFET Cross-Reference Search

 

VB1102M Datasheet (PDF)

 ..1. Size:673K  cn vbsemi
vb1102m.pdf pdf_icon

VB1102M

VB1102Mwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V 100 1.8 2.9 nC0.260 at VGS = 4.5 V 1.7APPLICATIONS DC/DC Converters Load Switch LED Backlight

 9.1. Size:235K  onsemi
nvb110n65s3f.pdf pdf_icon

VB1102M

MOSFET Power, SingleN-Channel, D2PAK650 V, 110 mW, 30 ANVB110N65S3FDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeV(BR)DSS RDS(ON) MAX

 9.2. Size:512K  cn vbsemi
vb1101m.pdf pdf_icon

VB1102M

VB1101Mwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.100 at VGS = 10 V 4.3 Material categorization:0.140 at VGS = 6 V 100 4.1 2.9 nC0.150 at VGS = 4.5 V 3.7APPLICATIONS DC/DC Converters Load Switch LED Backlight

 9.3. Size:485K  cn vbsemi
vb1106k.pdf pdf_icon

VB1102M

VB1106Kwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition100 2.8 at VGS = 10 V Low Threshold: 2 V (typ.)260 Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output Leakage TrenchFET Power MOSFET Compliant to RoHS Directive 2002/

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK7P65W | CHM85A3PAGP | SQ9407EY-T1 | SFFX054Z

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