VB1102M MOSFET Datasheet: N-Ch, 100V, 1.6A. Full specification with pinout and replacement list

VB1102M Specs and Replacement

Type Designator: VB1102M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.240 typ Ohm

Package: SOT23

VB1102M substitution

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VB1102M datasheet

..1. Size:673K cn vbsemi
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VB1102M www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested 0.240 at VGS = 10 V 2.0 Material categorization 0.250 at VGS = 6 V 100 1.8 2.9 nC 0.260 at VGS = 4.5 V 1.7 APPLICATIONS DC/DC Converters Load Switch LED Backlight... See More ⇒

9.1. Size:235K onsemi
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MOSFET Power, Single N-Channel, D2PAK 650 V, 110 mW, 30 A NVB110N65S3F Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize V(BR)DSS RDS(ON) MAX... See More ⇒

9.2. Size:512K cn vbsemi
vb1101m.pdf pdf_icon

VB1101M www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested 0.100 at VGS = 10 V 4.3 Material categorization 0.140 at VGS = 6 V 100 4.1 2.9 nC 0.150 at VGS = 4.5 V 3.7 APPLICATIONS DC/DC Converters Load Switch LED Backlight... See More ⇒

9.3. Size:485K cn vbsemi
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VB1106K www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 100 2.8 at VGS = 10 V Low Threshold 2 V (typ.) 260 Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage TrenchFET Power MOSFET Compliant to RoHS Directive 2002/... See More ⇒

Detailed specifications: UT2301G-AE3-R, UT2302G-AE3, UT2302L-AE3, UT2955G, UT6898G-S08-R, UT8205AG-AG6, UTT25P10L, UTT80N10, IRFB4110, VB1106K, VB1218X, VB1240B, VB1240X, VB1330X, VB162KX, VB2140, VB2290A