VB7322 Datasheet and Replacement
Type Designator: VB7322
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.030(typ) Ohm
Package: TSOP6
VB7322 substitution
VB7322 Datasheet (PDF)
vb7322.pdf
VB7322www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/DC C
Datasheet: VB1240X , VB1330X , VB162KX , VB2140 , VB2290A , VB2658 , VB562K , VB7101M , 7N65 , VB7638 , VB8658 , VB9220 , VBA1101N , VBA1203M , VBA1210 , VBA1302 , VBA1303 .
History: BUK9Y15-100E | BUK9Y21-40E
Keywords - VB7322 MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: BUK9Y15-100E | BUK9Y21-40E
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