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VB7322 Specs and Replacement

Type Designator: VB7322

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.030 typ Ohm

Package: TSOP6

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VB7322 datasheet

 ..1. Size:779K  cn vbsemi
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VB7322

VB7322 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/DC C... See More ⇒

Detailed specifications: VB1240X, VB1330X, VB162KX, VB2140, VB2290A, VB2658, VB562K, VB7101M, 7N65, VB7638, VB8658, VB9220, VBA1101N, VBA1203M, VBA1210, VBA1302, VBA1303

Keywords - VB7322 MOSFET specs

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