All MOSFET. VBA3316G Datasheet

 

VBA3316G MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBA3316G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017(typ) Ohm
   Package: SO8

 VBA3316G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBA3316G Datasheet (PDF)

 ..1. Size:1131K  cn vbsemi
 vba3316g.pdf

VBA3316G VBA3316G

VBA3316Gwww.VBsemi.comDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.017 at VGS = 10 V 8.0 TrenchFET Power MOSFETChannel-1 30 12.50.021 at V = 4.5 V 7.5 100 % Rg and UIS TestedGS 0.009 at VGS = 10 V 15.0 Compliant to RoHS Directi

 7.1. Size:536K  cn vbsemi
 vba3316.pdf

VBA3316G VBA3316G

VBA3316www.VBsemi.comDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-

 8.1. Size:573K  cn vbsemi
 vba3310.pdf

VBA3316G VBA3316G

VBA3310www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.010 at VGS = 10 V 1230 5.9 nC Optimized for High-Side Synchronous0.012 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS

 9.1. Size:496K  cn vbsemi
 vba3328.pdf

VBA3316G VBA3316G

VBA3328www.VBsemi.comDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: KP739B | IRLS520A

 

 
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