All MOSFET. VBA4658 Datasheet

 

VBA4658 Datasheet and Replacement


   Type Designator: VBA4658
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054(typ) Ohm
   Package: SO8
 

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VBA4658 Datasheet (PDF)

 ..1. Size:490K  cn vbsemi
 vba4658.pdf pdf_icon

VBA4658

VBA4658www.VBsemi.comDual P-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.059 at VGS = - 10 V - 5.3 100 % UIS TestedRoHS- 60 17 nCCOMPLIANT0.069 at VGS = - 4.5 V - 5.0APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vi

 9.1. Size:768K  cn vbsemi
 vba4670.pdf pdf_icon

VBA4658

VBA4670www.VBsemi.comDual P-Channel 60-V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) RDS(on) ( ) Typ. ID (A) d Qg (TYP.) Halogen-free According to IEC 61249-2-21 Definition0.066 at VGS = -10 V -5.0-60 10.1 nC TrenchFET Power MOSFET 0.070 at VGS = -4.5 V -4.0 Compliant to RoHS Directive 2002/95/ECS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D

Datasheet: VBA3316G , VBA3328 , VBA3410 , VBA3695 , VBA4216 , VBA4311 , VBA4317 , VBA4338 , IRF1407 , VBA4670 , VBA5102M , VBA5325 , VBA5415 , TSA100N20M , TSA18N50MR , TSA20N60MR , TSA20N65MR .

History: APT4080BN | 25N10G-TM3-T

Keywords - VBA4658 MOSFET datasheet

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