VBA5102M MOSFET. Datasheet pdf. Equivalent
Type Designator: VBA5102M
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 3.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.240(typ) Ohm
Package: SO8
VBA5102M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBA5102M Datasheet (PDF)
..1. Size:837K cn vbsemi
vba5102m.pdf
vba5102m.pdf
VBA5102Mwww.VBsemi.comN- and P-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested0.240 at VGS = 10 V 2.2N-Channel 100 122.10.260 at VGS = 4.5 V APPLICATIONS0.490 at VGS = -10 V -1.9P-Channel -100 21 H bridge / DC-AC inverter0.530 at VGS = -4.5 V -1.6- Brushless
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
