All MOSFET. VBA5102M Datasheet

 

VBA5102M Datasheet and Replacement


   Type Designator: VBA5102M
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.240(typ) Ohm
   Package: SO8
 

 VBA5102M substitution

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VBA5102M Datasheet (PDF)

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VBA5102M

VBA5102Mwww.VBsemi.comN- and P-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested0.240 at VGS = 10 V 2.2N-Channel 100 122.10.260 at VGS = 4.5 V APPLICATIONS0.490 at VGS = -10 V -1.9P-Channel -100 21 H bridge / DC-AC inverter0.530 at VGS = -4.5 V -1.6- Brushless

Datasheet: VBA3410 , VBA3695 , VBA4216 , VBA4311 , VBA4317 , VBA4338 , VBA4658 , VBA4670 , P60NF06 , VBA5325 , VBA5415 , TSA100N20M , TSA18N50MR , TSA20N60MR , TSA20N65MR , TSA23N50M , TSA24N50M .

History: AUIRFS8405 | SPP03N60C3 | SI2341 | TSM2312CX | CJQ4406 | 2N7002NXBK | 30P55

Keywords - VBA5102M MOSFET datasheet

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