VBA5102M Specs and Replacement
Type Designator: VBA5102M
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.240 typ Ohm
Package: SO8
VBA5102M substitution
- MOSFET ⓘ Cross-Reference Search
VBA5102M datasheet
vba5102m.pdf
VBA5102M www.VBsemi.com N- and P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested 0.240 at VGS = 10 V 2.2 N-Channel 100 12 2.1 0.260 at VGS = 4.5 V APPLICATIONS 0.490 at VGS = -10 V -1.9 P-Channel -100 21 H bridge / DC-AC inverter 0.530 at VGS = -4.5 V -1.6 - Brushless... See More ⇒
Detailed specifications: VBA3410, VBA3695, VBA4216, VBA4311, VBA4317, VBA4338, VBA4658, VBA4670, AO4407, VBA5325, VBA5415, TSA100N20M, TSA18N50MR, TSA20N60MR, TSA20N65MR, TSA23N50M, TSA24N50M
Keywords - VBA5102M MOSFET specs
VBA5102M cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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