VBA5325 MOSFET Datasheet: NP-Ch, 30V, 6.8A. Full specification with pinout and replacement list

VBA5325 Specs and Replacement

Type Designator: VBA5325

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 typ Ohm

Package: SO8

VBA5325 substitution

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VBA5325 datasheet

..1. Size:709K cn vbsemi
vba5325.pdf pdf_icon

VBA5325 www.VBsemi.com N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VGS... See More ⇒

9.1. Size:664K cn vbsemi
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VBA5311 www.VBsemi.com N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = 10 V 11 100 % Rg and UIS Tested N-Channel 30 13.3 Compliant to RoHS Directive 2002/95/EC 0.014 at VGS = 4.5 V 10 APPLICATIONS 0.017 at VGS = - 10 V... See More ⇒

Detailed specifications: VBA3695, VBA4216, VBA4311, VBA4317, VBA4338, VBA4658, VBA4670, VBA5102M, BS170, VBA5415, TSA100N20M, TSA18N50MR, TSA20N60MR, TSA20N65MR, TSA23N50M, TSA24N50M, TSA28N50M