All MOSFET. FDB12N50F Datasheet

 

FDB12N50F Datasheet and Replacement


   Type Designator: FDB12N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 165 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 21 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO263 D2PAK
 
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FDB12N50F Datasheet (PDF)

 ..1. Size:602K  fairchild semi
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FDB12N50F

November 2007UniFETTMFDB12N50FtmN-Channel MOSFET, FRFET 500V, 11.5A, 0.7Features Description RDS(on) = 0.59 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC)DMOS technology. Low Crss ( Typ. 11pF)This advance technology has b

 ..2. Size:756K  onsemi
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FDB12N50F

FDB12N50FN-Channel UniFETTM FRFET MOSFET500 V, 11.5 A, 700 mDescriptionFeaturesUniFETTM MOSFET is ON Semiconductors high voltage RDS(on) = 590 m (Typ.) @ VGS = 10 V, ID = 6 AMOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 21 nC)provide better switching performa

 ..3. Size:934K  cn vbsemi
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FDB12N50F

FDB12N50Fwww.VBsemi.twPower MOSFETN-Channel 650V (D-S)FEATURESPRODUCT SUMMARYVDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.67 Reduced switching and conduction lossesQg max. (nC)41 Ultra low gate charge (Qg)Qgs (nC) 5 Avalanche energy rated (UIS)Qgd (nC)22Configurati

 6.1. Size:2875K  fairchild semi
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FDB12N50F

June 2007UniFETTMFDB12N50TMtmN-Channel MOSFET 500V, 11.5A, 0.65Features Description RDS(on) = 0.55 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 12pF)This advanced technology has been especi

Datasheet: FDB060AN08A0 , FDB070AN06A0 , FDB075N15A , FDB082N15A , FDB088N08 , FDB110N15A , FDB120N10 , STU407DH , 2SK3878 , FDB12N50TM , FDB12N50U , FDB13AN06A0 , FDB14AN06LA0F085 , FDB14N30 , FDB150N10 , STU408D , FDB15N50 .

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