FDB12N50F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDB12N50F
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 165 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 11.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 21 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.7 Ohm
Тип корпуса: TO263 D2PAK
FDB12N50F Datasheet (PDF)
fdb12n50f.pdf
November 2007UniFETTMFDB12N50FtmN-Channel MOSFET, FRFET 500V, 11.5A, 0.7Features Description RDS(on) = 0.59 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC)DMOS technology. Low Crss ( Typ. 11pF)This advance technology has b
fdb12n50f.pdf
FDB12N50FN-Channel UniFETTM FRFET MOSFET500 V, 11.5 A, 700 mDescriptionFeaturesUniFETTM MOSFET is ON Semiconductors high voltage RDS(on) = 590 m (Typ.) @ VGS = 10 V, ID = 6 AMOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 21 nC)provide better switching performa
fdb12n50f.pdf
FDB12N50Fwww.VBsemi.twPower MOSFETN-Channel 650V (D-S)FEATURESPRODUCT SUMMARYVDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.67 Reduced switching and conduction lossesQg max. (nC)41 Ultra low gate charge (Qg)Qgs (nC) 5 Avalanche energy rated (UIS)Qgd (nC)22Configurati
fdb12n50tm.pdf
June 2007UniFETTMFDB12N50TMtmN-Channel MOSFET 500V, 11.5A, 0.65Features Description RDS(on) = 0.55 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 12pF)This advanced technology has been especi
fdb12n50u.pdf
March 2008TMUltra FRFETFDB12N50UtmN-Channel MOSFET, FRFET 500V, 10A, 0.8Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC)DMOS technology. Low Crss ( Typ. 11pF)This advance technology has
fdb12n50tm.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
