All MOSFET. TSA23N50M Datasheet


TSA23N50M MOSFET. Datasheet pdf. Equivalent

   Type Designator: TSA23N50M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 280 W
   Maximum Drain-Source Voltage |Vds|: 500 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 23 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 70 nC
   Rise Time (tr): 400 nS
   Drain-Source Capacitance (Cd): 400 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.26 Ohm
   Package: TO3P

 TSA23N50M Transistor Equivalent Substitute - MOSFET Cross-Reference Search


TSA23N50M Datasheet (PDF)

 ..1. Size:1104K  truesemi


TSA23N50M500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemisadvanced planar stripe DMOS technology. 23A,500V,Max.RDS(on)=0.26 @ VGS =10VThis advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand

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