TSA23N50M Spec and Replacement
Type Designator: TSA23N50M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 400 nS
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO3P
TSA23N50M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSA23N50M Specs
tsa23n50m.pdf
TSA23N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. 23A,500V,Max.RDS(on)=0.26 @ VGS =10V This advanced technology has been especially tailored to Low gate charge(typical 70nC) minimize on-state resistance, provide superior switching High ruggedness performance, and withstand... See More ⇒
Detailed specifications: VBA4670 , VBA5102M , VBA5325 , VBA5415 , TSA100N20M , TSA18N50MR , TSA20N60MR , TSA20N65MR , 5N60 , TSA24N50M , TSA28N50M , TSA3878 , TSA50N20MK , TSA82N25M , TSA82N30M , TSD16N25M , TSD18N20M .
History: PDC3902X
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