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TSA3878 Specs and Replacement

Type Designator: TSA3878

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO3P

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TSA3878 datasheet

 ..1. Size:703K  truesemi
 tsa3878.pdf pdf_icon

TSA3878

TSA3878 900V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 9.0A,900V,Max.RDS(on)=1.20 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 52nC) minimize on-state resistance, provide superior switching High ruggedness performance, and w... See More ⇒

Detailed specifications: VBA5415, TSA100N20M, TSA18N50MR, TSA20N60MR, TSA20N65MR, TSA23N50M, TSA24N50M, TSA28N50M, AO3407, TSA50N20MK, TSA82N25M, TSA82N30M, TSD16N25M, TSD18N20M, TSD5N50MR, TSD5N60M, TSU5N60M

Keywords - TSA3878 MOSFET specs

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