All MOSFET. TSA3878 Datasheet

 

TSA3878 Datasheet and Replacement


   Type Designator: TSA3878
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO3P
 

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TSA3878 Datasheet (PDF)

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TSA3878

TSA3878900V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 9.0A,900V,Max.RDS(on)=1.20 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 52nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and w

Datasheet: VBA5415 , TSA100N20M , TSA18N50MR , TSA20N60MR , TSA20N65MR , TSA23N50M , TSA24N50M , TSA28N50M , 7N60 , TSA50N20MK , TSA82N25M , TSA82N30M , TSD16N25M , TSD18N20M , TSD5N50MR , TSD5N60M , TSU5N60M .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

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