TSD5N60M Datasheet and Replacement
Type Designator: TSD5N60M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO252
TSD5N60M substitution
TSD5N60M Datasheet (PDF)
tsd5n60m tsu5n60m.pdf

TSD5N60M/TSU5N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 4.5A,600V,Max.RDS(on)=2.5 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 12nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and
tsd5n65m tsu5n65m.pdf

TSD5N65M/TSU5N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 3.0A,650V,Max.RDS(on)=3.0 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and
tsd5n50mr.pdf

TSD5N50MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 4.5A,500V,Max.RDS(on)=1.6 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 12nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an
Datasheet: TSA28N50M , TSA3878 , TSA50N20MK , TSA82N25M , TSA82N30M , TSD16N25M , TSD18N20M , TSD5N50MR , IRF830 , TSU5N60M , TSD5N65M , TSU5N65M , TSD840MD , TSF10N80M , TSF16N50MR , TSF16N60MR , TSF16N65MR .
History: CTLM8110-M832D | HSS2306A
Keywords - TSD5N60M MOSFET datasheet
TSD5N60M cross reference
TSD5N60M equivalent finder
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TSD5N60M replacement
History: CTLM8110-M832D | HSS2306A



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