TSD5N60M Specs and Replacement
Type Designator: TSD5N60M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO252
TSD5N60M substitution
- MOSFET ⓘ Cross-Reference Search
TSD5N60M datasheet
tsd5n60m tsu5n60m.pdf
TSD5N60M/TSU5N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 4.5A,600V,Max.RDS(on)=2.5 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 12nC) minimize on-state resistance, provide superior switching High ruggedness performance, and... See More ⇒
tsd5n65m tsu5n65m.pdf
TSD5N65M/TSU5N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 3.0A,650V,Max.RDS(on)=3.0 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC) minimize on-state resistance, provide superior switching High ruggedness performance, and... See More ⇒
tsd5n50mr.pdf
TSD5N50MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 4.5A,500V,Max.RDS(on)=1.6 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 12nC) minimize on-state resistance, provide superior switching High ruggedness performance, an... See More ⇒
Detailed specifications: TSA28N50M, TSA3878, TSA50N20MK, TSA82N25M, TSA82N30M, TSD16N25M, TSD18N20M, TSD5N50MR, 2N60, TSU5N60M, TSD5N65M, TSU5N65M, TSD840MD, TSF10N80M, TSF16N50MR, TSF16N60MR, TSF16N65MR
Keywords - TSD5N60M MOSFET specs
TSD5N60M cross reference
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