All MOSFET. TSU5N60M Datasheet

 

TSU5N60M Datasheet and Replacement


   Type Designator: TSU5N60M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO251
 

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TSU5N60M Datasheet (PDF)

 ..1. Size:1121K  truesemi
 tsd5n60m tsu5n60m.pdf pdf_icon

TSU5N60M

TSD5N60M/TSU5N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 4.5A,600V,Max.RDS(on)=2.5 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 12nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

 8.1. Size:1206K  truesemi
 tsd5n65m tsu5n65m.pdf pdf_icon

TSU5N60M

TSD5N65M/TSU5N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 3.0A,650V,Max.RDS(on)=3.0 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

Datasheet: TSA3878 , TSA50N20MK , TSA82N25M , TSA82N30M , TSD16N25M , TSD18N20M , TSD5N50MR , TSD5N60M , IRFB31N20D , TSD5N65M , TSU5N65M , TSD840MD , TSF10N80M , TSF16N50MR , TSF16N60MR , TSF16N65MR , TSF18N20M .

History: 2SK3125 | MTC4503LQ8 | MSC22N03 | NVMFD024N06C | TSD5N65M

Keywords - TSU5N60M MOSFET datasheet

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