All MOSFET. TSD840MD Datasheet

 

TSD840MD Datasheet and Replacement


   Type Designator: TSD840MD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO252
 

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TSD840MD Datasheet (PDF)

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TSD840MD

TSD840MD500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 8.0A,500V,Max.RDS(on)=0.95 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to 100% avalanche testedminimize on-state resistance, provide superior switching High ruggednessperformance, and withsta

Datasheet: TSA82N30M , TSD16N25M , TSD18N20M , TSD5N50MR , TSD5N60M , TSU5N60M , TSD5N65M , TSU5N65M , RU6888R , TSF10N80M , TSF16N50MR , TSF16N60MR , TSF16N65MR , TSF18N20M , TSF18N50MR , TSF18N60MR , TSF20N50M .

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