All MOSFET. TSD840MD Datasheet

 

TSD840MD MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSD840MD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO252

 TSD840MD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSD840MD Datasheet (PDF)

 ..1. Size:2699K  truesemi
 tsd840md.pdf

TSD840MD TSD840MD

TSD840MD500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 8.0A,500V,Max.RDS(on)=0.95 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to 100% avalanche testedminimize on-state resistance, provide superior switching High ruggednessperformance, and withsta

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top