TSD840MD Specs and Replacement
Type Designator: TSD840MD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO252
TSD840MD substitution
- MOSFET ⓘ Cross-Reference Search
TSD840MD datasheet
tsd840md.pdf
TSD840MD 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 8.0A,500V,Max.RDS(on)=0.95 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to 100% avalanche tested minimize on-state resistance, provide superior switching High ruggedness performance, and withsta... See More ⇒
Detailed specifications: TSA82N30M, TSD16N25M, TSD18N20M, TSD5N50MR, TSD5N60M, TSU5N60M, TSD5N65M, TSU5N65M, AO3400A, TSF10N80M, TSF16N50MR, TSF16N60MR, TSF16N65MR, TSF18N20M, TSF18N50MR, TSF18N60MR, TSF20N50M
Keywords - TSD840MD MOSFET specs
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