TSP60R190S2 PDF and Equivalents Search

 

TSP60R190S2 Specs and Replacement

Type Designator: TSP60R190S2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220

TSP60R190S2 substitution

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TSP60R190S2 datasheet

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TSP60R190S2

May, 2018 SJ-FET TSF60R190S2/TSP60R190S2 600V N-Channel Super-Junction MOSFET Gen- Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing an advanced charge balance mechanism for outstanding 650V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16 This advanced technology ... See More ⇒

Detailed specifications: TSF18N20M, TSF18N50MR, TSF18N60MR, TSF20N50M, TSF20N60MR, TSF20N65MR, TSF4N90M, TSF60R190S2, EMB04N03H, TSF65R190S2, TSP65R190S2, TSA65R190S2, TSK65R190S2, TSF65R360S2, TSF840MD, TSF840MR, TSF9N90M

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