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TSA65R190S2 Spec and Replacement


   Type Designator: TSA65R190S2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO3P

 TSA65R190S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSA65R190S2 Specs

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TSA65R190S2

May, 2018 SJ-FET TSF65R190S2/TSP65R190S2/TSA65R190S2/TSK65R190S2 650V N-Channel Super-Junction MOSFET Gen- Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing an advanced charge balance mechanism for outstanding 700V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16 T... See More ⇒

Detailed specifications: TSF20N50M , TSF20N60MR , TSF20N65MR , TSF4N90M , TSF60R190S2 , TSP60R190S2 , TSF65R190S2 , TSP65R190S2 , AOD4184A , TSK65R190S2 , TSF65R360S2 , TSF840MD , TSF840MR , TSF9N90M , TSK80R240S1 , TSK82N25M , TSP10N60M .

History: IPF090N03LG

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