All MOSFET. TSK82N25M Datasheet

 

TSK82N25M Datasheet and Replacement


   Type Designator: TSK82N25M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 550 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 82 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 783 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO247
 

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TSK82N25M Datasheet (PDF)

 ..1. Size:942K  truesemi
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TSK82N25M

TSK82N25M 250V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 82A,250V,Max.RDS(on)=35m@ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand

Datasheet: TSP65R190S2 , TSA65R190S2 , TSK65R190S2 , TSF65R360S2 , TSF840MD , TSF840MR , TSF9N90M , TSK80R240S1 , IRF3205 , TSP10N60M , TSF10N60M , TSP10N65M , TSF10N65M , TSP12N60M , TSF12N60M , TSP12N65M , TSF12N65M .

History: AM90N06-19B

Keywords - TSK82N25M MOSFET datasheet

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