TSK82N25M PDF and Equivalents Search

 

TSK82N25M Specs and Replacement

Type Designator: TSK82N25M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 550 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 82 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 783 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO247

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TSK82N25M datasheet

 ..1. Size:942K  truesemi
 tsk82n25m.pdf pdf_icon

TSK82N25M

TSK82N25M 250V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 82A,250V,Max.RDS(on)=35m @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC) minimize on-state resistance, provide superior switching High ruggedness performance, and withstand... See More ⇒

Detailed specifications: TSP65R190S2, TSA65R190S2, TSK65R190S2, TSF65R360S2, TSF840MD, TSF840MR, TSF9N90M, TSK80R240S1, IRF3205, TSP10N60M, TSF10N60M, TSP10N65M, TSF10N65M, TSP12N60M, TSF12N60M, TSP12N65M, TSF12N65M

Keywords - TSK82N25M MOSFET specs

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