TSK82N25M MOSFET. Datasheet pdf. Equivalent
Type Designator: TSK82N25M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 550 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 82 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 123 nC
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 783 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO247
TSK82N25M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSK82N25M Datasheet (PDF)
..1. Size:942K truesemi
tsk82n25m.pdf
tsk82n25m.pdf
TSK82N25M 250V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 82A,250V,Max.RDS(on)=35m@ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
