All MOSFET. TSF12N65M Datasheet

 

TSF12N65M Datasheet and Replacement


   Type Designator: TSF12N65M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220F
 

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TSF12N65M Datasheet (PDF)

 ..1. Size:1088K  truesemi
 tsp12n65m tsf12n65m.pdf pdf_icon

TSF12N65M

TSP12N65M/TSF12N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 12A,650V,Max.RDS(on)=0.75 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 52nC)minimize on-state resistance, provide superior switching High ruggednessperformance, a

 7.1. Size:1165K  truesemi
 tsp12n60m tsf12n60m.pdf pdf_icon

TSF12N65M

TSP12N60M/TSF12N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 12A,600V,Max.RDS(on)=0.7 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 52nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an

Datasheet: TSK82N25M , TSP10N60M , TSF10N60M , TSP10N65M , TSF10N65M , TSP12N60M , TSF12N60M , TSP12N65M , IRF640 , TSP13N50M , TSF13N50M , TSP4N60M , TSF4N60M , TSP5N65M , TSF5N65M , TSP740MR , TSF740MR .

History: 5N65KG-TF1-T | AP13P15GP-HF | SI9424BDY | PJD5NA80 | IPB017N08N5 | DH850N10 | IPB015N08N5

Keywords - TSF12N65M MOSFET datasheet

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