TSF13N50M Specs and Replacement
Type Designator: TSF13N50M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TO220F
TSF13N50M substitution
- MOSFET ⓘ Cross-Reference Search
TSF13N50M datasheet
tsp13n50m tsf13n50m.pdf
TSP13N50M/TSF13N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 13A,500V,Max.RDS(on)=0.48 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 45nC) minimize on-state resistance, provide superior switching High ruggedness perfo... See More ⇒
Detailed specifications: TSF10N60M, TSP10N65M, TSF10N65M, TSP12N60M, TSF12N60M, TSP12N65M, TSF12N65M, TSP13N50M, IRF1404, TSP4N60M, TSF4N60M, TSP5N65M, TSF5N65M, TSP740MR, TSF740MR, TSP7N60M, TSF7N60M
Keywords - TSF13N50M MOSFET specs
TSF13N50M cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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