TSF740MR Specs and Replacement
Type Designator: TSF740MR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 39.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 10.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 31.5 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.51 Ohm
Package: TO220F
TSF740MR substitution
- MOSFET ⓘ Cross-Reference Search
TSF740MR datasheet
tsp740mr tsf740mr.pdf
TSP740MR/TSF740MR 400V N-Channel MOSFET General Description Features - 10.5A, 400V, RDS(on)typ. = 0.46 @VGS = 10 V This Power MOSFET is produced using Truesemi s - Low gate charge ( typical 15.7nC) advanced planar stripe DMOS technology. - High ruggedness This advanced technology has been especially tailored - Fast switching to minimize on-state resistance, provide superior sw... See More ⇒
Detailed specifications: TSF12N65M, TSP13N50M, TSF13N50M, TSP4N60M, TSF4N60M, TSP5N65M, TSF5N65M, TSP740MR, IRFB4227, TSP7N60M, TSF7N60M, TSP7N65M, TSF7N65M, TSP7N80M, TSF7N80M, TSP840MR, TSP8N65M
Keywords - TSF740MR MOSFET specs
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