YJD20N06A Specs and Replacement

Type Designator: YJD20N06A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm

Package: TO252

YJD20N06A substitution

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YJD20N06A datasheet

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YJD20N06A

RoHS COMPLIANT YJD20N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 20A D R ( at V =10V) 43mohm DS(ON) GS R ( at V =4.5V) 47 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell d... See More ⇒

Detailed specifications: TSP840MR, TSP8N65M, TSF8N65M, YJB150G06AK, YJB150N06BQ, YJB200G06B, YJD15N10A, YJD18GP10A, 2N7002, YJD30N02A, YJD40N04A, YJD45G10A, YJD45P03A, YJD50N03A, YJD60N02A, YJD60N04A, YJD65G10A

Keywords - YJD20N06A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.