All MOSFET. YJD60N02A Datasheet

 

YJD60N02A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJD60N02A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 65 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO252

 YJD60N02A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJD60N02A Datasheet (PDF)

 ..1. Size:639K  cn yangzhou yangjie elec
 yjd60n02a.pdf

YJD60N02A YJD60N02A

RoHS COMPLIANT YJD60N02A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 60A D R ( at V =4.5V) 6.0mohm DS(ON) GS R ( at V =2.5V) 8.8mohm DS(ON) GS R ( at V =1.8V) 14mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package f

 7.1. Size:620K  cn yangzhou yangjie elec
 yjd60n04a.pdf

YJD60N02A YJD60N02A

RoHS COMPLIANT YJD60N04A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 40V DS I 60A D R ( at V =10V) 7.0 mohm DS(ON) GS R ( at V =4.5V) 9.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cel

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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