YJD60N02A Specs and Replacement

Type Designator: YJD60N02A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO252

YJD60N02A substitution

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YJD60N02A datasheet

 ..1. Size:639K  cn yangzhou yangjie elec
 yjd60n02a.pdf pdf_icon

YJD60N02A

RoHS COMPLIANT YJD60N02A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 60A D R ( at V =4.5V) 6.0mohm DS(ON) GS R ( at V =2.5V) 8.8mohm DS(ON) GS R ( at V =1.8V) 14mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package f... See More ⇒

 7.1. Size:620K  cn yangzhou yangjie elec
 yjd60n04a.pdf pdf_icon

YJD60N02A

RoHS COMPLIANT YJD60N04A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 40V DS I 60A D R ( at V =10V) 7.0 mohm DS(ON) GS R ( at V =4.5V) 9.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cel... See More ⇒

Detailed specifications: YJD15N10A, YJD18GP10A, YJD20N06A, YJD30N02A, YJD40N04A, YJD45G10A, YJD45P03A, YJD50N03A, IRFP260, YJD60N04A, YJD65G10A, YJD80N03A, YJD80N03B, YJD90N02A, YJG15GP10A, YJG30N06A, YJG40G10A

Keywords - YJD60N02A MOSFET specs

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