YJG15GP10A Specs and Replacement
Type Designator: YJG15GP10A
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 119 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: PDFN5X6
YJG15GP10A substitution
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YJG15GP10A datasheet
yjg15gp10a.pdf
RoHS COMPLIANT YJG15GP10A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -100V DS I -15A D R ( at V =-10V) 90 mohm DS(ON) GS R ( at V =-4.5V) 110 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split gate trench MOSFET technology Excellent package for heat dissipation High dens... See More ⇒
Detailed specifications: YJD45P03A, YJD50N03A, YJD60N02A, YJD60N04A, YJD65G10A, YJD80N03A, YJD80N03B, YJD90N02A, AON7410, YJG30N06A, YJG40G10A, YJG50N03A, YJG70G06A, YJG80G06B, YJG85G06AK, YJG90G10A, YJJ09N03A
Keywords - YJG15GP10A MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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